Boron is a common element and Boron has two isotopes Boron 10 and Boron 11. Boron 10 makes up about 20% of Boron's natural abundance, while Boron 11 accounts for about 80%. The atomic masses of Boron 11 and Boron 10 are 11.009305 and 10.012937, respectively, with a difference of about 0.996368. This slight difference leads to distinct physical and chemical properties between Boron 11 and Boron 10, as well as different application areas and market values.
Boron trifluoride Boron 11 is a compound composed of Boron 11 and fluorine. Its molecular structure is a planar triangle, where the Boron atom is at the center, and the fluorine atoms are at the vertices. The bond angle between the Boron atom and the fluorine atoms is 120°, and the bond length between the Boron and fluorine atoms is 0.130 nanometers. Integrated circuit chips produced using Boron 11 isotopes for semiconductor doping exhibit strong resistance to radiation and single event effects; the probability of single electron effects occurring in these chips is reduced by 71-92% compared to those produced using Boron 10 and Boron 11 isotopes for semiconductor doping.
Boron trifluoride Boron 11 is a consumable material in semiconductor manufacturing. Against the backdrop of the global semiconductor industry shifting eastward, domestic semiconductor companies in China are experiencing rapid growth in demand for high-purity, high-abundance Boron trifluoride Boron 11. However, the production technology for Boron trifluoride Boron 11 has high barriers and low capacity, making the domestic market demand largely reliant on imports. Imported Boron trifluoride Boron 11 is expensive, necessitating its domestic production. The Boron trifluoride B11 developed and produced by Shandong Heyi Gas Co., LTD surpasses the technical standards of similar foreign products, breaking overseas monopolies and filling the domestic supply gap.
Boron trifluoride B 11 has extensive applications in the electronic information industry, including the following areas:
Semiconductor Manufacturing: Boron trifluoride 11 is an efficient Boron dopant, useful in silicon ion implantation for producing highly integrated, high-density, compact chips, such as memory, logic devices, and microprocessors. The advantages of Boron trifluoride Boron 11 include enabling low-temperature, low-pressure, and low-energy implantation, reducing crystal defects, and enhancing chip performance and reliability. Its application processes mainly include Low-Pressure Injection (LPI), Chemical Vapor Deposition (CVD), and Plasma-Enhanced Chemical Vapor Deposition (PECVD).
Display Panel Manufacturing: Boron trifluoride B 11 is an efficient Boron source for manufacturing display panels like Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). The advantages of Boron 11 and Boron trifluoride Boron 11 include achieving high-purity, high-uniformity, and high-stability Boron film deposition, improving display effects and energy efficiency. Its application processes mainly include Atomic Layer Deposition (ALD), Molecular Beam Epitaxy (MBE), and Magnetron Sputtering (MCS).
Optical Fiber Manufacturing: Boron trifluoride B 11 is an efficient Boron source for producing optical fiber preforms, such as communication fibers, medical fibers, and laser fibers. The advantages include achieving high-purity, high-uniformity, and high-stability Boron doping, improving the refractive index, dispersion, and attenuation characteristics of the fibers. Its application processes mainly include Modified Chemical Vapor Deposition (MCVD), Plasma-Activated Chemical Vapor Deposition (PACVD), and Outside Vapor Deposition (OVD).
English
